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Fraunhofer-Institut für Angewandte Festkörperphysik IAF

Research institution

Function in the ecosystem

  • Materials and wafers
  • Test / measurement equipment
  • Foundry access
  • Packaging & Assembly
  • Reliability & failure analysis

Profile

Fraunhofer IAF develops high-frequency electronics based on the compound semiconductors InGaAs and GaN for frequencies of up to 1 THz. Applications include 5G/6G, radar, satellite communications, and highly precise microwave radiometers. Extremely low-noise InGaAs mHEMT amplifiers for cryogenic temperatures are suitable for quantum computing and radio astronomy. With 50 nm gates and cutoff frequencies of up to 1 THz, they achieve the lowest noise figures with barely measurable heating at −270 °C.

Furthermore, IAF develops robust, efficient GaN components for communications, radar, testing, and measurement systems. Its portfolio includes design, material growth, processing, characterization, as well as modules and subsystems. The GaN50X–GaN07 process family, with gate lengths from 500 to 70 nm, enables MMICs operating at up to 200 GHz and delivering maximum power up to 10 GHz, including for pilot production. These components are used as low-noise amplifiers, powe

Technologies

  • GaN
  • Power electronics
  • RF / high frequency

Certifications

ISO 9001